Schalterdioden sind Halbleiterdioden, die in elektronischen Schaltungen dazu verwendet werden, für Wechselspannungen schaltbare Verbindungen herzustellen. Die Funktion einer Schalterdiode beruht darauf, dass eine Diode in Durchflussrichtung (Vorwärtsrichtung) einen geringen differentiellen Widerstand hat, also für kleine Wechselspannungen gut leitet, bei Anlegen einer Gleichspannung in Sperrrichtung einen extrem hohen Widerstand und nur eine geringe Kapazität hat, also sperrt. Es wird also ein Wechselspannungssignal dadurch geschaltet, dass an die Diode Gleichspannung angelegt wird.
Schalterdioden werden beispielsweise in Tunern dazu verwendet, verschiedene Frequenzbereiche einzustellen, indem Spulen zu Schwingkreisen dazugeschaltet werden. Schalterdioden haben gegenüber mechanischen Schaltern (bzw. Relais) den Vorteil höherer Schaltgeschwindigkeit und geringerer Fehleranfälligkeit.
Anforderungen an Schalterdioden sind kleine Sperrschichtkapazität und geringer differentieller Widerstand in Vorwärtsrichtung. Für die zweite Anforderung ist ein relativ hoher Strom in Vorwärtsrichtung nötig, da der differentielle Widerstand einer Diode umgekehrt proportional zum Strom ist. Allerdings kann für hohe Frequenzen ein geringerer differentieller Widerstand erreicht werden, wenn die Lebensdauer der Ladungsträger in der Diode lang genug ist, also die Diode sozusagen „zu langsam“ für diese Frequenz ist. In dieser Eigenschaft unterscheiden sich Schalterdioden (z. B. BA243, BA244) deutlich von Universaldioden bzw. Schaltdioden mit geringer Sperrschichtkapazität (z. B. 1N4148).
| Artikelnummer | Hersteller | Beschreibung |
|---|---|---|
| IMN10 | Rohm | Switching diode |
| IMP11 | Rohm | Switching diode |
| 1SS309 | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWITCHING APLICATIONS) |
| 1SS301 | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWITCHING APLICATIONS) |
| 1SS226 | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) |
| 1SS181 | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
| 1SS193 | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) |
| 1SS184 | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWITCHING APLICATION) |
| 1SS352 | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) |
| BA892 | Philips Semiconductors | Band-switching diode |
| BA892-02L | Infineon Technologies | Silicon Switching Diode |
| BA892-02V | Infineon Technologies | Silicon Switching Diode |
| BAS40-07W | Siemens Semiconductor Group | Silicon Schottky Diode Preliminary data (General-purpose diode high-speed switching Circuit protection Voltage clamping) |
| BAS40-T1 | Siemens Semiconductor Group | HiRel Silicon Schottky Diode (HiRel Discrete Microwave Semiconductor General-purpose diodes high-speed switching Circuit protection) |
| DAN235E | Rohm | Band switching diode |
| HSM124 | Hitachi Semiconductor | Silicon Epitaxial Planar Diode Switching |
| HSM124S | Hitachi Semiconductor | Silicon Epitaxial Planar Diode Switching |
| MMAD130 | Microsemi Corporation | Switching Diode Array |
| MMBD6050 | Zowie Technology Corporation | SWITCHING DIODE |
| MMBD6050LT1 | Motorola, | Switching Diode |
| BA423A | Philips Semiconductors | band-switching diode |
| BA423AL | Philips Semiconductors | band-switching diode |
| CMHD4448 | Central Semiconductor Corp | HIGH SPEED SWITCHING DIODE |
| 1SS293 | Toshiba Semiconductor | DIODE VOLTAGE HIGH SPEED SWITCHING) |
| 1SS302 | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
| HSM221C | Hitachi Semiconductor | Silicon Epitaxial Planar Diode High Speed Switching |
| SMBD2835 | Siemens Semiconductor Group | Silicon Switching Diode Array |
| SMBD2836 | Siemens Semiconductor Group | Silicon Switching Diode Array |
| SMBD2837 | Siemens Semiconductor Group | Silicon Switching Diode Array |
| SMBD2838 | Siemens Semiconductor Group | Silicon Switching Diode Array |
| SMBD6050 | Siemens Semiconductor Group | Silicon Switching Diode |
| SMBD6100 | Siemens Semiconductor Group | Silicon Switching Diode Array |
| SMBD7000 | Infineon Technologies | Silicon Switching Diode Array |
| SMBD914 | Infineon Technologies | Silicon Switching Diode |
| CDSN101A | Comchip Technology | Switching Diode |
| KTX402U | KEC(Korea Electronics) | EPITAXIAL PLANAR TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE, VOLTAGE HIGH SPEED SWITCHING) |
| BGX50A | Siemens Semiconductor Group | Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
| DWA010 | Sanyo Semicon Device | Ultrahigh-Speed Switching Diode |
| BAW156LT1 | Leshan Radio Company | Monolithic Dual Switching Diode |
| BAW101 | Siemens Semiconductor Group | Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes) |
| BAV756 | Philips Semiconductors | High-speed switching diode array |
| BAV756DW | Diodes Incorporated | QUAD SURFACE MOUNT SWITCHING DIODE ARRAY |
| BAV756S | Philips Semiconductors | High-speed switching diode array |
| BAV301 | TRSYS | SURFACE MOUNT SWITCHING DIODE |
| BUP305 | Siemens Semiconductor Group | IGBT With Antiparallel Diode forward voltage drop High switching speed tail current Latch-up free Including fast free-wheel diode) |
| BUP305D | Siemens Semiconductor Group | IGBT With Antiparallel Diode forward voltage drop High switching speed tail current Latch-up free Including fast free-wheel diode) |
| BUP306D | Siemens Semiconductor Group | IGBT With Antiparallel Diode forward voltage drop High switching speed tail current Latch-up free Including fast free-wheel diode) |
| BUP307D | Siemens Semiconductor Group | IGBT With Antiparallel Diode forward voltage drop High switching speed tail current Latch-up free Including fast free-wheel diode) |
| UMN11N | Rohm | Switching diode |
| UMN1N | Rohm | Switching diode |
| UMP11N | Rohm | Switching diode |
| UMP1N | Rohm | Switching diode |
| CMUD2836 | Central Semiconductor Corp | ULTRAmini. SURFACE MOUNT DUAL HIGH SPEED SWITCHING SILICON DIODE |
| CMUD2838 | Central Semiconductor Corp | ULTRAmini. SURFACE MOUNT DUAL HIGH SPEED SWITCHING SILICON DIODE |
| CDSU101A | Comchip Technology | Switching Diode |
| HVU132 | Hitachi Semiconductor | Silicon Epitaxial Planar Diode High Frequency Switching |
| HSU227 | Hitachi Semiconductor | Silicon Schottky Barrier Diode High Speed Switching |
| NTE109 | Electronics | Germanium Diode Fast Switching General Purpose |
| CDST4448 | Comchip Technology | Surface Mount Switching Diode |
| CDST4148 | Comchip Technology | Surface Mount Switching Diode |
| 1N4148-1 | Microsemi Corporation | Silicon Switching Diode |
| 1N4148-T3 | Won-Top Electronics | FAST SWITCHING DIODE |
| 1N4148-TB | Won-Top Electronics | FAST SWITCHING DIODE |
| 1N4148W-7 | Diodes Incorporated | SURFACE MOUNT FAST SWITCHING DIODE |
| 1N4148WS-T1 | Won-Top Electronics | SURFACE MOUNT FAST SWITCHING DIODE |
| 1N4148WS-T3 | Won-Top Electronics | SURFACE MOUNT FAST SWITCHING DIODE |
| 1N4148W-T1 | Won-Top Electronics | SURFACE MOUNT FAST SWITCHING DIODE |
| 1N4148W-T3 | Won-Top Electronics | SURFACE MOUNT FAST SWITCHING DIODE |
| 1N4148WX | Micro Commercial Components | High Speed Switching Diode 500mW |
| RLS4148 | Rohm | Switching diode |
| KDS226 | KEC(Korea Electronics) | SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING) |
| RLS4150 | Rohm | Switching diode |
| DAP222 | Motorola, | SOT-416/SC-90 PACKAGE COMMON ANODE DUAL SWITCHING DIODE SURFACE MOUNT |
| SD101AW | Diodes Incorporated | SCHOTTKY BARRIER SWITCHING DIODE |
| CMPD6001 | Central Semiconductor Corp | SURFACE MOUNT LEAKAGE SWITCHING DIODE |
| CMPD6001A | Central Semiconductor Corp | SURFACE MOUNT LEAKAGE SWITCHING DIODE |
| CMPD6001C | Central Semiconductor Corp | SURFACE MOUNT LEAKAGE SWITCHING DIODE |
| CMPD6001S | Central Semiconductor Corp | SURFACE MOUNT LEAKAGE SWITCHING DIODE |
| BAV21 | Diodes Incorporated | FAST SWITCHING DIODE |
| BAV21W | Diodes Incorporated | SURFACE MOUNT SWITCHING DIODE |
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