Eine Leuchtdiode (kurz LED von englisch light-emitting diode, dt. Licht-emittierende Diode, auch Lumineszenz-Diode) ist ein Licht emittierendes Halbleiter-Bauelement, dessen elektrische Eigenschaften einer Diode entsprechen. Fließt durch die Diode elektrischer Strom in Durchlassrichtung, so strahlt sie Licht, Infrarotstrahlung oder auch Ultraviolettstrahlung mit einer vom Halbleitermaterial und der Dotierung abhängigen Wellenlänge ab.
Funktionsprinzip
Der prinzipielle Aufbau einer Leuchtdiode entspricht dem einer pn-Halbleiterdiode; Leuchtdioden besitzen daher die gleichen Grundeigenschaften wie diese. Ein großer Unterschied besteht in dem verwendeten Halbleitermaterial. Während nichtleuchtende Dioden aus Silicium, seltener aus Germanium oder Selen hergestellt werden, ist das Ausgangsmaterial für Leuchtdioden ein direkter Halbleiter, meist eine Galliumverbindung als III-V-Verbindungshalbleiter.
Wird an eine Halbleiterdiode eine Spannung in Durchlassrichtung angelegt, wandern Elektronen von der n-dotierten Seite zum p-n-Übergang. Nach Übergang zur p-dotierten Seite geht das Elektron dann in das energetisch günstigere Valenzband über. Dieser Übergang wird Rekombination genannt, denn er kann auch als Zusammentreffen von einem Elektron im Leitungsband mit einem Defektelektron (Loch) interpretiert werden. Die bei der Rekombination frei werdende Energie kann in einem direkten Halbleiter als Licht (Photon) abgegeben werden.
| Artikelnummer | Hersteller | Beschreibung |
|---|---|---|
| IRF7807D1 | International Rectifier | MOSFET SCHOTTKY DIODE |
| IRF7807D2 | International Rectifier | MOSFET SCHOTTKY DIODE |
| IRF7807VD1 | International Rectifier | FETKY MOSFET SCHOTTKY DIODE |
| IRF7807VD2 | International Rectifier | FETKY MOSFET SCHOTTKY DIODE |
| 1N6264 | Optoelectronics | GAAS INFRARED EMITTING DIODE |
| 71061 | Vishay Siliconix | P-Channel 30-V MOSFET with Schottky Diode |
| BAT54C-7 | Diodes Incorporated | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| BAT54CDW | Diodes Incorporated | SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS |
| BAT54CDW-7 | Diodes Incorporated | SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS |
| BAT54CFILM | STMicroelectronics | SMALL SIGNAL SCHOTTKY DIODE |
| BAT54CSM | Seme | SCHOTTKY DIODE HERMETIC CERAMIC SURFACE MOUNT PACKAGE HIGH RELIABILITY APPLICATIONS |
| BAT54C-T1 | Won-Top Electronics | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| BAT54C-T3 | Won-Top Electronics | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| BAT54CW-T1 | Won-Top Electronics | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| BAT54CW-T3 | Won-Top Electronics | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| BAT54RCLT1 | Zowie Technology Corporation | SCHOTTKY BARRIER DIODE |
| TLP722 | Toshiba Semiconductor | Photocoupler Photo−Diode |
| CD5356B | Compensated Deuices Incorporated | ZENER DIODE CHIPS |
| CMZ5356B | Central Semiconductor Corp | HIGH POWER ZENER DIODE VOLTS THRU VOLTS 5.0W, TOLERANCE |
| DS1104SG27 | Dynex Semiconductor | Rectifier Diode |
| TR1104SG27 | TRSYS | RECTIFIER DIODE |
| DS1107SG37 | Dynex Semiconductor | Rectifier Diode |
| TR1107SG37 | TRSYS | RECTIFIER DIODE |
| DS1109SG47 | Dynex Semiconductor | Rectifier Diode |
| DS1112SG57 | Dynex Semiconductor | Rectifier Diode |
| SG5768 | Microsemi Corporation | DIODE ARRAY CIRCUITS |
| SG5770 | Microsemi Corporation | DIODE ARRAY CIRCUITS |
| SG5772 | Microsemi Corporation | DIODE ARRAY CIRCUITS |
| SG5774 | Microsemi Corporation | DIODE ARRAY CIRCUITS |
| SG5774F | Microsemi Corporation | DIODE ARRAY CIRCUITS |
| BUPD1520 | Power Innovations Limited | SILICON TRANSISTOR WITH INTEGRATED DIODE |
| LMH6533 | National Semiconductor | Four Channel Laser Diode Driver with Dual Output, LVDS Interface Oscillator |
| LMH6533SP | National Semiconductor | Four Channel Laser Diode Driver with Dual Output, LVDS Interface Oscillator |
| LMH6533SPX | National Semiconductor | Four Channel Laser Diode Driver with Dual Output, LVDS Interface Oscillator |
| CM521613 | Powerex Power Semiconductors | SCR/Diode POW-R-BLOK Modules Amperes/1200-1600 Volts |
| DF25216 | Dynex Semiconductor | Fast Recovery Diode |
| DF45216 | Dynex Semiconductor | Fast Recovery Diode |
| CD471290 | Powerex Power Semiconductors | POW-R-BLOK Dual SCR/Diode Isolated Module Amperes 1600 Volts |
| CD471290A | Powerex Power Semiconductors | POW-R-BLOK Dual SCR/Diode Isolated Module Amperes 1600 Volts |
| IMN10 | Rohm | Switching diode |
| IMP11 | Rohm | Switching diode |
| 1SV232 | Toshiba Semiconductor | VARIABLE CAPACITANCE DIODE (CATV TUNING) |
| HGT4E20N60A4DS | Fairchild Semiconductor | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG20N60A4D | Fairchild Semiconductor | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG20N60B3D | Fairchild Semiconductor | 600V, Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG20N60C3D | Fairchild Semiconductor | 600V, Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| MGW20N60D | Motorola, | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| SKW20N60 | Infineon Technologies | Fast IGBT NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| 1SV239 | Toshiba Semiconductor | VARIABLE CAPACITANCE DIODE RADIO) |
| 1SS309 | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWITCHING APLICATIONS) |
| 1SS301 | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWITCHING APLICATIONS) |
| 1SV228 | Toshiba Semiconductor | VARIABLE CAPACITANCE DIODE (ELECTRONIC TUNING APPLICATIONS RECEIVERS) |
| 1SS226 | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) |
| 1SS181 | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
| 1SS193 | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) |
| 1SS184 | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWITCHING APLICATION) |
| 1SS300 | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWTHCING PPLICATION) |
| 1SS352 | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) |
| 1SV160 | Toshiba Semiconductor | VARIABLE CAPACITANCE DIODE APLICATION RECEIVER) |
| 1SV285 | Toshiba Semiconductor | VARIABLE CAPACITANCE DIODE BAND RADIO) |
| MLL957B | Microsemi Corporation | LEADLESS GLASS ZENER DIODE SURFACE MOUNT |
| CMZ5953B | Central Semiconductor Corp | SURFACE MOUNT SILICON ZENER DIODE WATT, THRU VOLTS TOLERANCE |
| BAS125-07 | Siemens Semiconductor Group | Silicon Schottky Diode low-loss, fast-recovery, meter protection, bias isolation clamping applications) |
| BAS125-07W | Siemens Semiconductor Group | Silicon Schottky Diode low-loss, fast-recovery, meter protection, bias isolation clamping applications) |
| BA892 | Philips Semiconductors | Band-switching diode |
| BA892-02L | Infineon Technologies | Silicon Switching Diode |
| BA892-02V | Infineon Technologies | Silicon Switching Diode |
| BAS40-02L | Infineon Technologies | Silicon Schottky Diode |
| BAS40-02V | Vishay Siliconix | Schottky Diode SOD-523 |
| BAS40-02V-GS08 | Vishay Siliconix | Schottky Diode SOD-523 |
| BAS40-02V-GS18 | Vishay Siliconix | Schottky Diode SOD-523 |
| BAS40-06HT1 | Leshan Radio Company | Comon Anode Schottky Barrier Diode |
| BAS40-06LT1 | Semiconductor | SCHOTTKY BARRIER DIODE |
| BAS40-07W | Siemens Semiconductor Group | Silicon Schottky Diode Preliminary data (General-purpose diode high-speed switching Circuit protection Voltage clamping) |
| BAS40BRW | Diodes Incorporated | SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS |
| BAS40DW-04 | Diodes Incorporated | SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS |
| BAS40DW-05 | Diodes Incorporated | SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS |
| BAS40DW-06 | Diodes Incorporated | SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS |
| BAS40L | Philips Semiconductors | Schottky barrier diode |
| BAS40-T1 | Siemens Semiconductor Group | HiRel Silicon Schottky Diode (HiRel Discrete Microwave Semiconductor General-purpose diodes high-speed switching Circuit protection) |