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ÄHNLICHE NX5312_06

• NX5310
• NX5310EH-AZ
• NX5310EK-AZ
• NX5310_06
• NX5311
• NX5311GH
• NX5311GK
• NX5312
• NX531206
• NX5312EH-AZ
• NX5312EK-AZ
• NX5312_06
• NX5313
• NX5313EH
• NX5313EK

NX5312_06 DIODE DER DATENBLATT

Transistorgehäuse :

Hersteller : CEL[California Eastern Labs]

Pins :

Beschreibung : Mb/s, Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
Mb/s, Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

Betriebstemperaturbereich : Min °C | Max °C

NX531206 PDF