Transistorgehäuse :
Hersteller : IRF[International Rectifier]
Pins :
Beschreibung : INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)
Betriebstemperaturbereich : Min °C | Max °C