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ÄHNLICHE IRG4BC10SD-L

IRG4BC10SD-L DIODE DER DATENBLATT

Transistorgehäuse :

Hersteller : International Rectifier

Pins :

Beschreibung : INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)

Betriebstemperaturbereich : Min °C | Max °C

IRG4BC10SD-L PDF

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