Transistorgehäuse :
Hersteller : INTERSIL[Intersil Corporation]
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Beschreibung : 6.2A, 1200V, Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
6.2A, 1200V, Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Betriebstemperaturbereich : Min °C | Max °C