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ÄHNLICHE HGTP1N120BND

HGTP1N120BND DIODE DER DATENBLATT

Transistorgehäuse :

Hersteller : INTERSIL[Intersil Corporation]

Pins :

Beschreibung : 5.3A, 1200V, Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
5.3A, 1200V, Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Betriebstemperaturbereich : Min °C | Max °C

HGTP1N120BND PDF

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