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ÄHNLICHE HGT1S1N120CNDS

HGT1S1N120CNDS DIODE DER DATENBLATT

Transistorgehäuse :

Hersteller : Intersil Corporation

Pins :

Beschreibung : 6.2A, 1200V, Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
6.2A, 1200V, Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Betriebstemperaturbereich : Min °C | Max °C

HGT1S1N120CNDS PDF

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