Sponsor


ÄHNLICHE HGT1S1N120BNDS

HGT1S1N120BNDS DIODE DER DATENBLATT

Transistorgehäuse :

Hersteller : Intersil Corporation

Pins :

Beschreibung : 5.3A, 1200V, SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE
5.3A, 1200V, SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE

Betriebstemperaturbereich : Min °C | Max °C

HGT1S1N120BNDS PDF

Diode | диод | ダイオード | Diode | 二极管 | Diodo | 다이오드 | Site Map